MTD10N10EL_06 Datasheet, PDF (5/7 Pages) ON Semiconductor – TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount

MTD10N10EL
12
90
Q_T
75
8
V_GS
60
45
4
Q₁
Q₂
T_J = 25°C ³⁰
I_D = 10 A
15
0
Q₃
0
2
4
V_DS
0
6
8
10
Q_G, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000 _{TJ = 25°C}
I_D = 10 A
V_DS = 100 V
V_GS = 5 V
100
t_r
t_f
10
t_d(off)
t_d(on)
11
10
1
R_G, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
10
V_GS = 0 V
T_J = 25°C
8
6
4
2
0
0.5
0.6
0.7
0.8
0.9
1.0
V_SD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous drain−to−source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (T_C) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance−General
Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(I_DM) nor rated voltage (V_DSS) is exceeded and the
transition time (t_r,t_f) do not exceed 10 ms. In addition the total
power averaged over a complete switching cycle must not
exceed (T_J(MAX) − T_C)/(R_θJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (I_DM), the energy rating is specified at rated
continuous current (I_D), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12). Maximum
energy at currents below rated continuous I_D can safely be
assumed to equal the values indicated.
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