MTD10N10EL_06 Datasheet, PDF (2/7 Pages) ON Semiconductor – TMOS E−FET Power Field Effect Transistor DPAK for Surface Mount

MTD10N10EL
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V_DS = 100 Vdc, V_GS = 0 Vdc)
(V_DS = 100 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current (V_GS = ± 15 Vdc, V_DS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (V_GS = 5.0 Vdc, I_D = 5.0 Adc)
Drain−to−Source On−Voltage
(V_GS = 5.0 Vdc, I_D = 10 Adc)
(V_GS = 5.0 Vdc, I_D = 5.0 Adc, T_J = 125°C)
Forward Transconductance (V_DS = 15 Vdc, I_D = 5.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD = 50 Vdc, I_D = 10 Adc,
V_GS = 5.0 Vdc, R_G = 9.1 W)
Fall Time
Gate Charge (See Figure 8)
(V_DS = 80 Vdc, I_D = 10 Adc,
V_GS = 5.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 3)
(I_S = 10 Adc, V_GS = 0 Vdc)
(I_S = 10 Adc, V_GS = 0 Vdc, T_J = 125°C)
Reverse Recovery Time
(See Figure 14)
(I_S = 10 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/ms)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
Symbol
V_(BR)DSS
I_DSS
I_GSS
V_GS(th)
R_DS(on)
V_DS(on)
g_FS
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
V_SD
t_rr
t_a
t_b
Q_RR
L_D
L_S
Min
Typ
Max Unit
100
−
−
115
Vdc
−
−
mV/°C
mAdc
−
−
10
−
−
100
−
−
100 nAdc
Vdc
1.0
1.45
2.0
−
4.0
−
mV/°C
−
0.17 0.22
W
Vdc
−
1.85
2.6
−
−
2.3
2.5
7.9
−
mhos
−
741 1040
pF
−
175
250
−
18.9
40
−
11
20
ns
−
74
150
−
17
30
−
38
80
−
9.3
15
nC
−
2.56
−
−
4.4
−
−
4.66
−
Vdc
−
0.98
1.6
−
0.898
−
−
124.7
−
ns
−
86
−
−
38.7
−
−
0.539
−
mC
nH
−
4.5
−
nH
−
7.5
−
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