MMDF4C03HD Datasheet, PDF (5/16 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

MMDF4C03HD
0.050
0.045
T_J = 25_C
0.040
TYPICAL ELECTRICAL CHARACTERISTICS
N−Channel
V_GS = 4.5 V
0.18
T_J = 25_C
0.16
0.14
P−Channel
V_GS = 4.5 V
0.12
0.035
0.10
0.030
10 V
0.08
10 V
0.06
0.025
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
0.04
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.8
1.6
V_GS = 10 V
1.4
I_D = 3 A
1.2
1.0
0.8
0.6
0.4
0.2
0
−50 −25 0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (_C)
Figure 5. On−Resistance Variation with
Temperature
1.6
1.4
V_GS = 10 V
I_D = 1.5 A
1.2
1.0
0.8
0.6
0.4
0.2
0
−50 −25 0
25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (_C)
Figure 5. On−Resistance Variation with
Temperature
1000
V_GS = 0 V
100
T_J = 125_C
100
V_GS = 0 V
T_J = 125_C
100_C
10
10
1.0
25_C
100_C
0.1
0
5.0
10
15
20
25
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
1.0
0
5.0
10
15
20
25
30
V_DS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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