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MMDF4C03HD Datasheet, PDF (2/16 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS | |||
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MMDF4C03HD
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Polarity Min
OFF CHARACTERISTICS
DrainâtoâSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
GateâBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V(BR)DSS
â
30
IDSS
(N)
â
(P)
â
IGSS
â
â
VGS(th)
â
1.0
â
â
DrainâtoâSource OnâResistance (VGS = 10 Vdc, ID = 3.5 Adc) RDS(on)
(N)
â
(VGS = 10 Vdc, ID = 3.5 Adc) Note 2
(P)
â
Static DrainâtoâSource OnâResistance
RDS(on)
(VGS = 4.5 Vdc, ID = 2.5 Adc) Note 2
(N)
â
(VGS = 4.5 Vdc, ID = 2.0 Adc)
(P)
â
Forward Transconductance
gFS
(N)
â
(VDS = 15 Vdc, ID = 3.5 Adc)
(P)
â
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 24 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
(N)
â
(P)
â
Coss
(N)
â
(P)
â
Crss
(N)
â
(P)
â
SWITCHING CHARACTERISTICS (Note 2)
TurnâOn Delay Time
td(on)
(N)
â
(P)
â
Rise Time
TurnâOff Delay Time
(VDD = 15 Vdc,
ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0 â¦)
tr
(N)
â
(P)
â
td(off)
(N)
â
(P)
â
Fall Time
tf
(N)
â
(P)
â
Total Gate Charge
(See Figure 8)
QT
(N)
â
(P)
â
(VDS = 10 Vdc,
ID = 3.5 Adc,
VGS = 10 Vdc)
Q1
(N)
â
(P)
â
Q2
(N)
â
(P)
â
Q3
(N)
â
(P)
â
2. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
â
â
â
1.0
µAdc
â
1.0
â
±100
nAdc
â
â
0.037
0.075
0.55
0.125
9.0
6.0
â
â
0.05
0.085
0.08
0.16
â
â
Vdc
mV/°C
Ohms
Ohms
mhos
430
600
pF
425
600
217
300
209
300
67.5
135
57.2
80
8.2
16.4
ns
11.7
23.4
8.48
16.9
15.8
31.6
89.6
167.3
179
334.6
61.1
102.6
122
205.2
15.7
31.4
nC
14.8
29.6
2.0
â
1.7
â
4.6
â
4.7
â
3.9
â
3.4
â
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