MMDF4C03HD Datasheet, PDF (1/16 Pages) Motorola, Inc – COMPLEMENTARY DUAL TMOS POWER FET 30 VOLTS

MMDF4C03HD
Power MOSFET
4 Amps, 30 Volts
Complementary SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R_DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
• Ultra Low R_DS(on) Provides Higher Efficiency and Extends Battery
Life
• Logic Level Gate Drive − Can be Driven by Logic ICs
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Ideal for Synchronous Rectification
• Diode Exhibits High Speed, with Soft Recovery
• I_DSS Specified at Elevated Temperature
• Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Drain Current − Continuous
N−Channel
P−Channel
V_DSS
V_GS
I_D
30
± 20
5.5
4.4
Drain Current − Pulsed
N−Channel
P−Channel
I_DM
25
20
Operating and Storage Temperature Range
T_J, T_stg −55 to
+150
Total Power Dissipation @ T_A = 25°C
(Note 1)
P_D
2.5
Single Pulse Drain−to−Source Avalanche
E_AS
Energy − Starting T_J = 25°C
(V_DD = 30 Vdc, V_GS = 5.0 Vdc, I_L = 9.0 Apk,
L = 10 mH, R_G = 25 W)
N−Channel
325
(V_DD = 30 Vdc, V_GS = 5.0 Vdc, I_L = 9.0 Apk,
L = 10 mH, R_G = 25 W)
P−Channel
450
Thermal Resistance − Junction−to−Ambient
(Note 1)
R_θJA
50
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 sec.
T_L
260
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
Unit
Vdc
Vdc
Adc
Apk
°C
Watts
mJ
°C/W
°C
http://onsemi.com
4 AMPERES
30 VOLTS
R_DS(on) = 50 mW (N−Channel)
R_DS(on) = 85 mW (P−Channel)
N−Channel
D
P−Channel
D
G
G
S
S
MARKING
DIAGRAM
8
SO−8, Dual
CASE 751
STYLE 11
D4C03HD
LYWW
1
L
= Location Code
Y
= Year
WW = Work Week
PIN ASSIGNMENT
Source−1
Gate−1
Source−2
Gate−2
18
27
36
45
Top View
Drain−1
Drain−1
Drain−2
Drain−2
ORDERING INFORMATION
Device
Package
Shipping
MMDF4C03HDR2 SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. XXX
Publication Order Number:
MMDF4C03HD/D