MMBT2222LT1G_09 Datasheet, PDF (5/7 Pages) ON Semiconductor – General Purpose Transistors

MMBT2222LT1G, MMBT2222ALT1G
30
20
C_eb
10
7.0
5.0
C_cb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
V_CE = 20 V
T_J = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I_C, COLLECTOR CURRENT (mA)
Figure 10. Current−Gain Bandwidth Product
1
I_C/I_B = 10
150°C
0.1
−55°C
25°C
0.01
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 11. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 V_CE = 1 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 13. Base Emitter Voltage vs. Collector
Current
1.3
1.2
I_C/I_B = 10
1.1
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 12. Base Emitter Saturation Voltage vs.
Collector Current
+0.5
0
R_qVC for V_CE(sat)
- 0.5
- 1.0
- 1.5
- 2.0
R_qVB for V_BE
- 2.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200 500
I_C, COLLECTOR CURRENT (mA)
Figure 14. Temperature Coefficients
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