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MMBT2222LT1G_09 Datasheet, PDF (3/7 Pages) ON Semiconductor – General Purpose Transistors | |||
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MMBT2222LT1G, MMBT2222ALT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
SMALLâSIGNAL CHARACTERISTICS
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kW, f = 1.0 kHz)
MMBT2222A
SWITCHING CHARACTERISTICS (MMBT2222A only)
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = â 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
5. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
rb, Cc
NF
td
tr
ts
tf
Min
Max
Unit
ps
â
150
dB
â
4.0
â
10
ns
â
25
â
225
ns
â
60
+16 V
0
-â2 V
SWITCHING TIME EQUIVALENT TEST CIRCUITS
1.0 to 100 ms,
DUTY CYCLE â 2.0%
1 kW
< 2 ns
+â30 V
200
CS* < 10 pF
+16 V
0
-14 V
1.0 to 100 ms,
DUTY CYCLE â 2.0%
< 20 ns
1k
1N914
+â30 V
200
CS* < 10 pF
Scope rise time < 4 ns
-â4 V
*Total shunt capacitance of test jig, connectors, and oscilloscope.
Figure 1. TurnâOn Time
Figure 2. TurnâOff Time
1000
700
500
300
200
100
70
50
30
20
10
0.1
0.2 0.3 0.5 0.7 1.0
TJ = 125°C
25°C
-55°C
VCE = 1.0 V
VCE = 10 V
2.0 3.0 5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
50 70 100
200 300 500 700 1.0 k
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