MMBT2222LT1G_09 Datasheet, PDF (1/7 Pages) ON Semiconductor – General Purpose Transistors

MMBT2222LT1G,
MMBT2222ALT1G
General Purpose Transistors
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
V_CEO
Vdc
MMBT2222LT1G
30
MMBT2222ALT1G
40
Collector −Base Voltage
V_CBO
Vdc
MMBT2222LT1G
60
MMBT2222ALT1G
75
Emitter −Base Voltage
V_EBO
Vdc
MMBT2222LT1G
5.0
MMBT2222ALT1G
6.0
Collector Current − Continuous
Collector Current − Peak (Note 3)
THERMAL CHARACTERISTICS
I_C
600
mAdc
I_CM
1100
mAdc
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) T_A = 25°C
Derate above 25°C
Symbol
P_D
Max
225
1.8
Unit
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T_A = 25°C
Derate above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction−to−Ambient R_qJA
417
°C/W
Junction and Storage Temperature Range T_J, T_stg −55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
3. Reference SOA curve.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
xxx M G
G
1
xxx = 1P or M1B
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
October, 2009 − Rev. 9
Publication Order Number:
MMBT2222LT1/D