MJW3281A_06 Datasheet, PDF (5/6 Pages) ON Semiconductor – 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS

MJW3281A (NPN) MJW1302A (PNP)
PNP MJW1302A
100
NPN MJW3281A
100
10 mSec
10
10
10 mSec
100 mSec
100 mSec
1 Sec
1 Sec
1.0
1.0
0.1
1.0
10
100
1000
V_CE, COLLECTOR EMITTER (VOLTS)
Figure 13. Active Region Safe Operating Area
0.1
1.0
10
100
1000
V_CE, COLLECTOR EMITTER (VOLTS)
Figure 14. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 13 and 14 is based on T_J(pk) = 150°C;
T_C is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
10000
TYPICAL CHARACTERISTICS
PNP MJW1302A
C_ib
10000
NPN MJW3281A
C_ib
1000
C_ob
1000
C_ob
T_J = 25°C
f_test = 1 MHz
100
0.1
1.0
10
100
V_R, REVERSE VOLTAGE (VOLTS)
Figure 15. MJW1302A Typical Capacitance
T_J = 25°C
f_test = 1 MHz
100
0.1
1.0
10
100
V_R, REVERSE VOLTAGE (VOLTS)
Figure 16. MJW3281A Typical Capacitance
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