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MJW3281A_06 Datasheet, PDF (2/6 Pages) ON Semiconductor – 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS
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MJW3281A (NPN) MJW1302A (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 230 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 100 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5 Vdc)
(IC = 1 Adc, VCE = 5 Vdc)
(IC = 3 Adc, VCE = 5 Vdc)
(IC = 5 Adc, VCE = 5 Vdc)
(IC = 7 Adc, VCE = 5 Vdc)
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 15 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 1 Adc)
Base−Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Symbol
VCEO(sus)
ICBO
IEBO
IS/b
hFE
VCE(sat)
VBE(on)
fT
Cob
Min
Typ
Max
Unit
230
−
−
−
−
−
Vdc
−
mAdc
50
mAdc
5
Adc
4
−
−
1
−
−
−
50
125
200
50
−
200
50
−
200
50
−
200
50
115
200
45
−
−
12
35
−
Vdc
−
0.4
2
Vdc
−
−
2
MHz
−
30
−
pF
−
−
600
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