MJW3281A_06 Datasheet, PDF (3/6 Pages) ON Semiconductor – 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS

MJW3281A (NPN) MJW1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJW1302A
50
V_CE = 10 V
40
5V
30
20
10 T_J = 25°C
f_test = 1 MHz
0
0.1
1.0
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
NPN MJW3281A
60
V_CE = 10 V
50
5V
40
30
20
10 ^{TJ = 25°C}
f_test = 1 MHz
0
0.1
1.0
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
PNP MJW1302A
1000
T_J = 100°C
25°C
100
−25 °C
NPN MJW3281A
1000
25°C
T_J = 100°C
100
−25 °C
V_CE = 20 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain, V_CE = 20 V
V_CE = 20 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, V_CE = 20 V
PNP MJW1302A
1000
NPN MJW3281A
1000
T_J = 100°C
100
25°C
−25 °C
25°C
T_J = 100°C
100
−25 °C
V_CE = 5 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. DC Current Gain, V_CE = 5 V
V_CE = 5 V
10
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. DC Current Gain, V_CE = 5 V
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