MJW21195_10 Datasheet, PDF (5/7 Pages) ON Semiconductor – Silicon Power Transistors

MJW21195 (PNP) MJW21196 (NPN)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 13 is based on T_J(pk) = 150°C; T_C is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power than
can be handled to values less than the limitations imposed by
second breakdown.
TYPICAL CHARACTERISTICS
PNP MJW21195
100
NPN MJW21196
100
10 ms
10 ms
10
100 ms
10
100 ms
1 Sec
1 Sec
1
1
0.1
1
10
100
1000
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
0.1
1
10
100
1000
V_CE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 14. Active Region Safe Operating Area
10000
10000
C_ib
C_ib
1000
C_ob
T_J = 25°C
f_test = 1 MHz
100
0.1
1.0
10
100
V_R, REVERSE VOLTAGE (VOLTS)
Figure 15. MJW21195 Typical Capacitance
1000
T_J = 25°C
C_ob
f_test = 1 MHz
100
0.1
1.0
10
100
V_R, REVERSE VOLTAGE (VOLTS)
Figure 16. MJW21196 Typical Capacitance
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