English
Language : 

MJW21195_10 Datasheet, PDF (2/7 Pages) ON Semiconductor – Silicon Power Transistors
◁
MJW21195 (PNP) MJW21196 (NPN)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
Emitter Cutoff Current (VCE = 5 Vdc, IC = 0)
Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (non−repetitive)
(VCE = 80 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc)
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
unmatched
hFE
matched
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Symbol
VCEO(sus)
ICEO
IEBO
ICEX
IS/b
hFE
VBE(on)
VCE(sat)
THD
fT
Cob
Min Typical Max Unit
250
−
−
Vdc
−
−
100 mAdc
−
−
50
mAdc
−
−
50
mAdc
4.0
−
2.25
−
Adc
−
−
20
−
80
8
−
−
−
−
2.0
Vdc
Vdc
−
−
1.0
−
−
3
%
−
0.8
−
−
0.08
−
4
−
−
MHz
−
−
500
pF
http://onsemi.com
2
 ▷