MJW21195_10 Datasheet, PDF (4/7 Pages) ON Semiconductor – Silicon Power Transistors

MJW21195 (PNP) MJW21196 (NPN)
TYPICAL CHARACTERISTICS
PNP MJW21195
30
2.0 A
25
1.5 A
20
1.0 A
15
I_B = 0.5 A
10
5.0
T_J = 25°C
0
0
5.0
10
15
20
25
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
NPN MJW21196
30
2.0 A
25
1.5 A
1.0 A
20
I_B = 0.5 A
15
10
5.0
T_J = 25°C
0
0
5.0
10
15
20
25
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
3.0
2.5 ^TJ ^{= 25°C}
I_C/I_B = 10
2.0
PNP MJW21195
1.5
1.0
V_BE(sat)
0.5
V_CE(sat)
0
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 9. Typical Saturation Voltages
NPN MJW21196
1.4
T_J = 25°C
1.2 _{IC/IB = 10}
1.0
0.8
V_BE(sat)
0.6
0.4
V_CE(sat)
0.2
0
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 10. Typical Saturation Voltages
PNP MJW21195
10
T_J = 25°C
NPN MJW21196
10
T_J = 25°C
1.0
1.0
V_CE = 20 V
V_CE = 5 V
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 11. Typical Base−Emitter Voltage
V_CE = 20 V
V_CE = 5 V
0.1
0.1
1.0
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 12. Typical Base−Emitter Voltage
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