MC74LVX50_14 Datasheet, PDF (5/9 Pages) ON Semiconductor – Hex Buffer

MC74LVX50
K
t _TOP
COVER
TAPE
B₁
K₀
SEE
NOTE
11
FOR MACHINE REFERENCE
ONLY
INCLUDING DRAFT AND RADII
CONCENTRIC AROUND B₀
10 PITCHES
CUMULATIVE
TOLERANCE ON
TAPE
P₀
±0.2 mm
D
P₂
(±0.008”)
E
A₀ SEE NOTE 11
+ _B0
+
+
FW
P
EMBOSSMENT
USER DIRECTION OF FEED
CENTER
LINES
OF CAVITY
D₁
FOR COMPONENTS
2.0 mm × 1.2 mm
AND LARGER
R MIN.
BENDING RADIUS
TAPE AND COMPONENTS
SHALL PASS AROUND RADIUS “R”
WITHOUT DAMAGE
EMBOSSED
CARRIER
*TOP COVER
TAPE THICKNESS (t₁)
0.10 mm
(0.004”) MAX.
EMBOSSMENT
10°
MAXIMUM COMPONENT ROTATION
TYPICAL
COMPONENT CAVITY
CENTER LINE
100 mm
(3.937”)
1 mm MAX
TAPE
TYPICAL
COMPONENT
CENTER LINE
1 mm
(0.039”) MAX
250 mm
(9.843”)
CAMBER (TOP VIEW)
ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250 mm
11. A₀, B₀, and K₀ are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to
0.50 mm max. The component cannot rotate more than 10° within the determined cavity
Figure 6. Carrier Tape Specifications
http://onsemi.com
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