CAT28F010P-15 Datasheet, PDF (5/16 Pages) ON Semiconductor – 1 Megabit CMOS Flash Memory

CAT28F010
SUPPLY CHARACTERISTICS
Symbol
Parameter
VCC
VPPL
VPPH
VCC Supply Voltage
VPP During Read Operations
VPP During Read/Erase/Program
A.C. CHARACTERISTICS, Read Operation
V_CC = +5V ±10%, unless otherwise specified.
Limits
Min
Max.
4.5
5.5
0
6.5
11.4
12.6
28F010-90⁽⁷⁾
JEDEC Standard
Symbol Symbol Parameter
Min
t_AVAV
t_RC Read Cycle Time
90
t_ELQV
t_CE CE Access Time
t_AVQV
t_ACC Address Access Time
t_GLQV
t_OE OE Access Time
t_AXQX
t_OH Output Hold from Address OE/CE Change 0
t_GLQX t_OLZ(1)(6) OE to Output in Low-Z
0
t_ELZX t_LZ(1)(6) CE to Output in Low-Z
0
t_GHQZ t_DF(1)(2) OE High to Output High-Z
t_EHQZ t_DF(1)(2) CE High to Output High-Z
t_WHGL(1)
- Write Recovery Time Before Read
6
Max
90
90
35
20
30
28F010-12⁽⁷⁾
Min
120
0
0
0
6
Max
120
120
50
30
40
Unit
V
V
V
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
Figure 1. A.C. Testing Input/Output Waveform^(3)(4)(5)
2.4 V
0.45 V
INPUT PULSE LEVELS
2.0 V
0.8 V
REFERENCE POINTS
Testing Load Circuit (example)
1.3V
5108 FHD F03
1N914
3.3K
DEVICE
UNDER
TEST
OUT
CL = 100 pF
CL INCLUDES JIG CAPACITANCE
5108 FHD F04
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.
(3) Input Rise and Fall Times (10% to 90%) < 10 ns.
(4) Input Pulse Levels = 0.45V and 2.4V. For High Speed Input Pulse Levels 0.0V and 3.0V.
(5) Input and Output Timing Reference = 0.8V and 2.0V. For High Speed Input and Output Timing Reference = 1.5V.
(6) Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.
(7) For load and reference points, see Fig. 1
© 2009 SCILLC. All rights reserved.
5
Characteristics subject to change without notice
Doc. No. MD-1019, Rev. G