BUB323Z_14 Datasheet, PDF (5/8 Pages) ON Semiconductor – NPN Silicon Power Darlington

10000
1000
100
10
100
T_J = 125°C
-40°C
25°C
V_CE = 1.5 V
1000
I_C, COLLECTOR CURRENT (MILLIAMPS)
Figure 5. DC Current Gain
BUB323Z
10000
TYPICAL
1000
TYP + 6Σ
100
TYP - 6Σ
10000
10
100
V_CE = 5 V, T_J = 25°C
1000
10000
I_C, COLLECTOR CURRENT (MILLIAMPS)
Figure 6. DC Current Gain
100000
5.0
4.5
I_C = 3 A
4.0
T_J = 25°C
3.5
3.0
5A
2.5
8A
10 A
2.0
7A
1.5
1.0
0.5
0
1
10
100
I_B, BASE CURRENT (MILLIAMPS)
Figure 7. Collector Saturation Region
2.4
2.2
I_C/I_B = 150
2.0
1.8
1.6
T_J = 125°C
1.4
1.2
1.0
0.8
25°C
0.6
0.4
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 8. Collector−Emitter Saturation Voltage
2.0
I_C/I_B = 150
1.8
1.6
1.4
1.2
T_J = 25°C
125°C
2.0
V_CE = 2 VOLTS
1.8
1.6
1.4
T_J = 25°C
1.2
1.0
125°C
1.0
0.8
0.8
0.1
1
I_C, COLLECTOR CURRENT (AMPS)
0.6
10
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 9. Base−Emitter Saturation Voltage
Figure 10. Base−Emitter “ON” Voltages
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