BUB323Z_14 Datasheet, PDF (3/8 Pages) ON Semiconductor – NPN Silicon Power Darlington

BUB323Z
I_C
I_NOM = 6.5 A
Output transistor turns on: I_C = 40 mA
High Voltage Circuit turns on: I_C = 20 mA
Avalanche diode turns on: I_C = 100 mA
Icer Leakage Current
250 V
300 V
340 V
V_CE
V_CLAMP NOMINAL
= 400 V
Figure 1. I_C = f(V_CE) Curve Shape
MERCURY CONTACTS
WETTED RELAY
L INDUCTANCE
(8 mH)
V_CE
MONITOR
(V_GATE)
I_B CURRENT
SOURCE
R_BE = 100 W
V_BEoff
I_B2 SOURCE
I_C
MONITOR
I_C CURRENT
SOURCE
0.1 W
NON
INDUCTIVE
Figure 2. Basic Energy Test Circuit
By design, the BU323Z has a built−in avalanche diode and
a special high voltage driving circuit. During an
auto−protect cycle, the transistor is turned on again as soon
as a voltage, determined by the zener threshold and the
network, is reached. This prevents the transistor from going
into a Reverse Bias Operating limit condition. Therefore, the
device will have an extended safe operating area and will
always appear to be in “FBSOA.” Because of the built−in
zener and associated network, the I_C = f(V_CE) curve exhibits
an unfamiliar shape compared to standard products as
shown in Figure 1.
The bias parameters, V_CLAMP, I_B1, V_BE(off), I_B2, I_C, and
the inductance, are applied according to the Device Under
Test (DUT) specifications. V_CE and I_C are monitored by the
test system while making sure the load line remains within
the limits as described in Figure 4.
Note: All BU323Z ignition devices are 100% energy
tested, per the test circuit and criteria described in Figures 2
and 4, to the minimum guaranteed repetitive energy, as
specified in the device parameter section. The device can
sustain this energy on a repetitive basis without degrading
any of the specified electrical characteristics of the devices.
The units under test are kept functional during the complete
test sequence for the test conditions described:
I_C(peak) = 7.0 A, I_CH = 5.0 A, I_CL = 100 mA, I_B = 100 mA,
R_BE = 100 W, V_gate = 280 V, L = 8.0 mH
10
1 ^{TC = 25°C}
0.1
1 ms
10 ms
250 ms
300 ms
0.01
0.001
10
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED V_CEO
100
340 V
1000
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
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