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BUB323Z_14 Datasheet, PDF (2/8 Pages) ON Semiconductor – NPN Silicon Power Darlington
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BUB323Z
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 1)
Collector−Emitter Clamping Voltage (IC = 7.0 A)
(TC = − 40°C to +125°C)
Collector−Emitter Cutoff Current
(VCE = 200 V, IB = 0)
Emitter−Base Leakage Current
(VEB = 6.0 Vdc, IC = 0)
VCLAMP
350
−
450
Vdc
ICEO
−
−
100
mAdc
IEBO
−
−
50
mAdc
ON CHARACTERISTICS (Note 1)
Base−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 100 mAdc)
(IC = 10 Adc, IB = 0.25 Adc)
Collector−Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 70 mAdc)
(IC = 8.0 Adc, IB = 0.1 Adc)
(IC = 10 Adc, IB = 0.25 Adc)
Base−Emitter On Voltage
(IC = 5.0 Adc, VCE = 2.0 Vdc)
(IC = 8.0 Adc, VCE = 2.0 Vdc)
Diode Forward Voltage Drop
(IF = 10 Adc)
DC Current Gain
(IC = 6.5 Adc, VCE = 1.5 Vdc)
(IC = 5.0 Adc, VCE = 4.6 Vdc)
VBE(sat)
−
−
VCE(sat)
−
(TC = 125°C)
−
−
(TC = 125°C)
−
−
VBE(on)
(TC = − 40°C to +125°C)
1.1
1.3
VF
−
hFE
(TC = − 40°C to +125°C)
150
500
Vdc
−
2.2
−
2.5
Vdc
−
1.6
−
1.8
−
1.8
−
2.1
−
1.7
Vdc
−
2.1
−
2.3
−
2.5
Vdc
−
−
−
−
3400
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 6.0 V)
fT
−
−
2.0
MHz
Cob
−
−
200
pF
Cib
−
−
550
pF
CLAMPING ENERGY (See Notes)
Repetitive Non−Destructive Energy Dissipated at turn−off:
(IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4)
WCLAMP
200
−
−
mJ
SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)
Fall Time
Storage Time
Cross−over Time
(IC = 6.5 A, IB1 = 45 mA,
VBE(off) = 0, RBE(off) = 0,
VCC = 14 V, VZ = 300 V)
tfi
−
625
−
ns
tsi
−
10
30
ms
tc
−
1.7
−
ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
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