BC856BDW1T1G_16 Datasheet, PDF (5/7 Pages) ON Semiconductor – Dual General Purpose Transistors

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 _0.01
SINGLE PULSE
0.001
0
1.0
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
Z_qJA(t) = r(t) R_qJA
R_qJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) R_qJC(t)
10
100
1.0 k
10 k
t, TIME (ms)
Figure 13. Thermal Response
100 k
1.0 M
-200
1s
3 ms
-100
-50
T_A = 25°C TJ = 25°C
BC558
-10
BC557
BC556
-5.0
-2.0
-1.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
-5.0 -10
-30 -45 -65 -100
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
The safe operating area curves indicate I_C−V_CE limits
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T_J(pk) = 150°C; T_C
or T_A is variable depending upon conditions. Pulse curves
are valid for duty cycles to 10% provided T_J(pk) ≤ 150°C.
T_J(pk) may be calculated from the data in Figure 13. At high
case or ambient temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by the secondary breakdown.
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