BC856BDW1T1G_16 Datasheet, PDF (2/7 Pages) ON Semiconductor – Dual General Purpose Transistors

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V_(BR)CEO
Collector −Emitter Breakdown Voltage
(I_C = −10 mA, V_EB = 0)
BC856, SBC856 Series
BC857B, SBC857B Only
BC858 Series
V_(BR)CES
Collector −Base Breakdown Voltage
(I_C = −10 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V_(BR)CBO
Emitter −Base Breakdown Voltage
(I_E = −1.0 mA)
BC856, SBC856 Series
BC857, SBC857 Series
BC858 Series
V_(BR)EBO
Collector Cutoff Current
(V_CB = −30 V)
(V_CB = −30 V, T_A = 150°C)
ON CHARACTERISTICS
I_CBO
DC Current Gain
h_FE
(I_C = −10 mA, V_CE = −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
(I_C = −2.0 mA, V_CE = −5.0 V)
BC856B, SBC856B, BC857B, SBC857B
BC857C, SBC857C, BC858C
Collector −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter Saturation Voltage
(I_C = −10 mA, I_B = −0.5 mA)
(I_C = −100 mA, I_B = −5.0 mA)
Base −Emitter On Voltage
(I_C = −2.0 mA, V_CE = −5.0 V)
(I_C = −10 mA, V_CE = −5.0 V)
SMALL− SIGNAL CHARACTERISTICS
V_CE(sat)
V_BE(sat)
V_BE(on)
Current −Gain − Bandwidth Product
f_T
(I_C = −10 mA, V_CE = −5.0 Vdc, f = 100 MHz)
Output Capacitance
C_ob
(V_CB = −10 V, f = 1.0 MHz)
Noise Figure
NF
(I_C = −0.2 mA, V_CE = −5.0 Vdc, R_S = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
Min
−65
−45
−30
−80
−50
−30
−80
−50
−30
−5.0
−5.0
−5.0
−
−
−
−
220
420
−
−
−
−
−0.6
−
100
−
−
Typ
Max
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−15
−
−4.0
150
−
270
−
290
475
520
800
−
−0.3
−
−0.65
−0.7
−
−0.9
−
−
−0.75
−
−0.82
−
−
−
4.5
−
10
Unit
V
V
V
V
nA
mA
−
V
V
V
MHz
pF
dB
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