BC856BDW1T1G_16 Datasheet, PDF (3/7 Pages) ON Semiconductor – Dual General Purpose Transistors

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G,
SBC857BDW1T1G Series, BC858CDW1T1G Series
TYPICAL CHARACTERISTICS − BC856/SBC856
V_CE = -5.0 V
T_A = 25°C
2.0
1.0
0.5
0.2
-0.1 -0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
-1.0
T_J = 25°C
-0.8
V_BE(sat) @ I_C/I_B = 10
-0.6
V_BE @ V_CE = -5.0 V
-0.4
-0.2
V_CE(sat) @ I_C/I_B = 10
0
-0.2 -0.5 -1.0 -2.0 -5.0 -10 -20
-50 -100 -200
I_C, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
-2.0
-1.6
I_C =
-1.2 ^{-10 mA}
-20 mA
-50 mA -100 mA -200 mA
-0.8
-0.4
T_J = 25°C
0
-0.02 -0.05 -0.1
-0.2 -0.5 -1.0 -2.0
I_B, BASE CURRENT (mA)
-5.0 -10 -20
Figure 3. Collector Saturation Region
-1.0
-1.4
-1.8
q_VB for V_BE
-2.2
-55°C to 125°C
-2.6
-3.0
-0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I_C, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
40
T_J = 25°C
20
C_ib
10
8.0
6.0
C_ob
4.0
2.0
-0.1 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20
V_R, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
-50 -100
500 ^{VCE = -5.0 V}
200
100
50
20
-1.0
-10
-100
I_C, COLLECTOR CURRENT (mA)
Figure 6. Current−Gain − Bandwidth Product
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