BC856ALT1G Datasheet, PDF (5/7 Pages) ON Semiconductor – General Purpose Transistors PNP Silicon

BC856ALT1G Series
1.0
0.7
0.5 ^{D = 0.5}
0.2
0.3
0.2
0.05
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2
0.5
SINGLE PULSE
SINGLE PULSE
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
1.0 2.0
5.0 10 20
50 100 200
t, TIME (ms)
Figure 13. Thermal Response
Z_qJC(t) = r(t) R_qJC
R_qJC = 83.3°C/W MAX
Z_qJA(t) = r(t) R_qJA
R_qJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) R_qJC(t)
500 1.0 k 2.0 k
5.0 k 10 k
-200
-100
-50
-10
-5.0
-2.0
-1.0
1s
3 ms
T_A = 25°C TJ = 25°C
BC558, BC559
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate I_C−V_CE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon T_J(pk) = 150°C; T_C or
T_A is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T_J(pk) ≤ 150°C. T_J(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
-5.0 -10
-30 -45 -65 -100
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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