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BC856ALT1G Datasheet, PDF (1/7 Pages) ON Semiconductor – General Purpose Transistors PNP Silicon | |||
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BC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector-Emitter Voltage
BC856
VCEO
â65
V
BC857
â45
BC858, BC859
â30
Collector-Base Voltage
BC856
VCBO
â80
V
BC857
â50
BC858, BC859
â30
EmitterâBase Voltage
Collector Current â Continuous
THERMAL CHARACTERISTICS
VEBO
IC
â5.0
â100
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FRâ 5 Board,
PD
(Note 1) TA = 25°C
Derate above 25°C
225
mW
1.8
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
556
°C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg â55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
http://onsemi.com
1
BASE
COLLECTOR
3
2
EMITTER
3
1
2
SOTâ23 (TOâ236AB)
CASE 318
STYLE 6
MARKING DIAGRAM
xx M G
G
1
xx = Device Code
xx = (Refer to page 6)
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
August, 2009 â Rev. 11
Publication Order Number:
BC856ALT1/D
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