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BC856ALT1G Datasheet, PDF (2/7 Pages) ON Semiconductor – General Purpose Transistors PNP Silicon | |||
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BC856ALT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage
(IC = â10 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CEO
Collector âEmitter Breakdown Voltage
(IC = â10 mA, VEB = 0)
BC856 Series
BC857A, BC857B Only
BC858, BC859 Series
V(BR)CES
Collector âBase Breakdown Voltage
(IC = â10 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CBO
EmitterâBase Breakdown Voltage
(IE = â1.0 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)EBO
Collector Cutoff Current (VCB = â30 V)
Collector Cutoff Current (VCB = â30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = â10 mA, VCE = â5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B
BC857C, BC858C
ICBO
hFE
(IC = â2.0 mA, VCE = â5.0 V)
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
Collector âEmitter Saturation Voltage
(IC = â10 mA, IB = â0.5 mA)
(IC = â100 mA, IB = â5.0 mA)
Base âEmitter Saturation Voltage
(IC = â10 mA, IB = â0.5 mA)
(IC = â100 mA, IB = â5.0 mA)
Base âEmitter On Voltage
(IC = â2.0 mA, VCE = â5.0 V)
(IC = â10 mA, VCE = â5.0 V)
SMALLâSIGNAL CHARACTERISTICS
Current âGain â Bandwidth Product
(IC = â10 mA, VCE = â5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = â10 V, f = 1.0 MHz)
Noise Figure
(IC = â0.2 mA, VCE = â5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Min
â65
â45
â30
â80
â50
â30
â80
â50
â30
â5.0
â5.0
â5.0
â
â
â
â
â
125
220
420
â
â
â
â
â0.6
â
100
â
â
â
Typ
Max
Unit
â
â
V
â
â
â
â
â
â
V
â
â
â
â
â
â
V
â
â
â
â
â
â
V
â
â
â
â
â
â15
nA
â
â4.0
mA
90
â
â
150
â
270
â
180
250
290
475
520
800
V
â
â0.3
â
â0.65
V
â0.7
â
â0.9
â
V
â
â0.75
â
â0.82
â
â
MHz
â
4.5
pF
dB
â
10
â
4.0
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