 English |
|
|
|
|
|
|
|
| TIP120_07 Datasheet, PDF (4/7 Pages) Diotec Semiconductor – Si-Epitaxial Planar Darlington Power Transistors | |||
| |||
| ◁ |
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
VCC
-Ä30 V
Ä1N5825 USED ABOVE IB â 100 mA
ÄMSD6100 USED BELOW IB â 100 mA
RC
TUT
SCOPE
V2
RB
approx
+Ä8.0 V
0
51
D1
â 8.0 k â 120
V1
approx
-12 V
25 ms
tr, tf ⤠10 ns
DUTY CYCLE = 1.0%
+Ä4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities.
Figure 2. Switching Times Test Circuit
5.0
3.0
ts
PNP
NPN
2.0
1.0
tf
0.7
0.5
0.3
0.2 VCC = 30 V
IC/IB = 250
0.1 IB1 = IB2
0.07 TJ = 25°C
0.05
0.1
0.2 0.3
tr
td @ VBE(off) = 0
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
5.0 7.0 10
1.0
0.7 D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
0.07 0.05
0.05
0.02
0.03
0.02 0.01
SINGLE PULSE
0.01
0.01 0.02
0.05 0.1 0.2
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.5 1.0 2.0
5.0 10 20
t, TIME (ms)
Figure 4. Thermal Response
50 100 200
500 1.0 k
http://onsemi.com
4
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese