TIP120_07 Datasheet, PDF (1/7 Pages) Diotec Semiconductor – Si-Epitaxial Planar Darlington Power Transistors

TIP120, TIP121, TIP122
(NPN); TIP125, TIP126,
TIP127 (PNP)
Preferred Devices
Plastic Medium-Power
Complementary Silicon
Transistors
Designed for general-purpose amplifier and low-speed switching
applications.
Features
•ăHigh DC Current Gain -
h_FE = 2500 (Typ) @ I_C
= 4.0 Adc
•ăCollector-Emitter Sustaining Voltage - @ 100 mAdc
V_CEO(sus) = 60 Vdc (Min) - TIP120, TIP125
= 80 Vdc (Min) - TIP121, TIP126
= 100 Vdc (Min) - TIP122, TIP127
•ăLow Collector-Emitter Saturation Voltage -
V_CE(sat) = 2.0 Vdc (Max) @ I_C = 3.0 Adc
= 4.0 Vdc (Max) @ I_C = 5.0 Adc
•ăMonolithic Construction with Built-In Base-Emitter Shunt Resistors
•ăPb-Free Packages are Available*
http://onsemi.com
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80-100 VOLTS, 65 WATTS
MARKING
DIAGRAM
4
1
2
3
TO-220AB
CASE 221A
STYLE 1
TIP12xG
AYWW
TIP12x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©Ă Semiconductor Components Industries, LLC, 2007
1
November, 2007 - Rev. 7
Publication Order Number:
TIP120/D