PZT2222A Datasheet, PDF (4/5 Pages) NXP Semiconductors – NPN switching transistor

PZT2222A
TYPICAL CHARACTERISTICS
1000
T_A = 150°C
2.0
V_CE = 6 V
1.8
1.6
T_A = 25°C
T_A = 25°C
1.4
1.2
100 _{TA = −55°C}
1.0
0.8
0.6
0.4
10
0.1
1
0.2
0
10
100
1000
0.001 0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
I_B, BASE CURRENT (mA)
Figure 5. DC Current Gain vs. Collector
Current
Figure 6. Saturation Region
1.1
100
V_CE = 2 V
1.0
0.9 _{TA = −55°C}
C_ibo
0.8
0.7 _{TA = 25°C}
0.6
10 ^Cobo
0.5
0.4
T_A = 150°C
0.3
0.2
1
0.1
1
10
100
1000
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 7. Base−Emitter Turn−On Voltage vs.
Collector Current
V_R, REVERSE VOLTAGE (V)
Figure 8. Capacitance
1000
100
1s
0.1
0.01
0.001
0.0001
10
Single Pulse Test at T_A = 25°C
1
1
10
100
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
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