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PZT2222A Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN switching transistor
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PZT2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc)
Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc)
Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Collector−Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125°C)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = − 55°C)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector−Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base−Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Input Impedance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Small−Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Output Admittance°
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING TIMES (TA = 25°C)
Delay Time
Rise Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)
Figure 1
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB(on) = IB(off) = 15 mAdc)
Figure 2
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2
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEX
ICEX
IEBO
ICBO
40
°75°
6.0
−
−
−
−
−
−
Vdc
−
Vdc
−
Vdc
20
nAdc
10
nAdc
100
nAdc
10
nAdc
10
mAdc
hFE
VCE(sat)
VBE(sat)
°hie°
hre
ť hfe ť
°hoe°
F
−
35
−
50
−
70
−
35
−
100
300
50
−
40
−
Vdc
−
0.3
−
1.0
Vdc
0.6
1.2
−
2.0
kW
2.0
8.0
0.25
1.25
−
−
8.0x10−4
−
4.0x10−4
−
50
300
75
375
mmhos
5.0
35
25
200
−
4.0
dB
fT
MHz
300
−
Cc
−
8.0
pF
Ce
−
25
pF
td
−
10
ns
tr
−
25
ts
−
225
ns
tf
−
60
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