NSV60200LT1G Datasheet, PDF (4/5 Pages) ON Semiconductor – 60 V, 4.0 A, Low VCE(sat) PNP Transistor

NSS60200LT1G
1.0
10 mA
V_CE (V) I_C = 500 mA
0.8
100 mA
0.6
0.4
0.2
0
0.01
300 mA
0.1
1.0
10
100
I_B, BASE CURRENT (mA)
Figure 7. Saturation Region
375
350
325
300
275
250
225
200
175
150
0
C_ibo (pF)
1.0
2.0
3.0
4.0
5.0
6.0
V_EB, EMITTER BASE VOLTAGE (V)
Figure 8. Input Capacitance
90
10
85
100 ms 10 ms
80
C_obo (pF)
1s
1 ms
75
70
1.0
65
60
Thermal Limit
55
0.1
50
45
40
0.01
35
30
Single Pulse Test
25
at T_amb = 25°C
20
0.001
0 5.0 10 15 20 25 30 35
0.1
1.0
10
100
V_CB, COLLECTOR BASE VOLTAGE (V)
V_CE (V_dc)
Figure 9. Output Capacitance
Figure 10. Safe Operating Area
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