NSV60200LT1G Datasheet, PDF (3/5 Pages) ON Semiconductor – 60 V, 4.0 A, Low VCE(sat) PNP Transistor

NSS60200LT1G
0.2
IC/IB = 10
0.15
0.1
V_CE(sat) = 150°C
25°C
−55°C
0.05
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
400
350
150°C (2.0 V)
300
150°C (5.0 V)
250 ^{25°C (5.0 V)}
200 25°C (2.0 V)
150 _{−55°C (5.0 V)}
100 _{−55°C (2.0 V)}
50
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
IC/IB = 100
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
0.50
0.45 ^{IC/IB = 100}
−55°C
0.40
0.35
0.30
0.25
0.20
0.15
V_CE(sat) = 150°C
25°C
0.10
0.05
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
IC/IB = 10
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
V_CE = −2.0 V
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Turn−On Voltage vs.
Collector Current
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