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NSV60200LT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – 60 V, 4.0 A, Low VCE(sat) PNP Transistor
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NSS60200LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
Emitter−Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −60 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −6.0 Vdc)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = −0.1 A, IB = −0.010 A)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
Base −Emitter Saturation Voltage (Note 3)
(IC = −1.0 A, IB = −0.010 A)
Base −Emitter Turn−on Voltage (Note 3)
(IC = −1.0 A, VCE = −2.0 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
Delay (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
td
Rise (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tr
Storage (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
ts
Fall (VCC = −30 V, IC = 750 mA, IB1 = 15 mA)
tf
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Min
−60
−80
−7.0
−
−
150
150
100
100
−
−
−
−
−
−
100
−
−
−
−
−
−
Typ
Max
Unit
Vdc
−
−
Vdc
−
−
Vdc
−
−
mAdc
−
−0.1
mAdc
−
−0.1
−
300
−
−
−0.017
−0.095
−0.180
−0.170
−
−
−
−
−
−
−
−
−
−0.030
−0.120
−0.270
−0.220
−0.900
−0.850
−
325
62
V
V
V
MHz
pF
pF
−
60
ns
−
120
ns
−
400
ns
−
130
ns
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