NSTB1005DXV5_04 Datasheet, PDF (4/6 Pages) ON Semiconductor – Dual Common Base-Collector Bias Resistor Transistors

NSTB1005DXV5T1, NSTB1005DXV5T5
TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR
10
I_C/I_B = 10
1
0.1
1000
T_A = −25°C
25°C
100
75°C
V_CE = 10 V
T_A = 75°C
25°C
−25°C
0.01
0
1
0.8
0.6
0.4
0.2
00
20
40
50
10 ₁
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) versus I_C
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
f = 1 MHz
I_E = 0 mA
T_A = 25°C
100
25°C
75°C
10
T_A = −25°C
1
0.1
10
20
30
40
V_R, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
0.01
0.001
50
0
V_O = 5 V
2
4
6
8
10
V_in, INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
100
V_O = 0.2 V
10
T_A = −25°C
25°C
75°C
1
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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