English
Language : 

NSTB1005DXV5_04 Datasheet, PDF (2/6 Pages) ON Semiconductor – Dual Common Base-Collector Bias Resistor Transistors
◁
NSTB1005DXV5T1, NSTB1005DXV5T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Q1 TRANSISTOR: PNP − OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter−Base Cutoff Current
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
ON CHARACTERISTICS
DC Current Gain
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
Resistor Ratio
Q2 TRANSISTOR: NPN − OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0, IC = 5.0 mA)
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0)
Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
Input Resistor
Resistor Ratio
250
200
Symbol
Min
Typ
Max Unit
ICBO
−
ICEO
−
IEBO
−
V(BR)CBO
50
V(BR)CEO
50
−
100 nAdc
−
500 nAdc
−
0.1 mAdc
−
−
Vdc
−
−
Vdc
hFE
80
140
−
VCE(sat)
−
−
0.25 Vdc
VOL
−
−
0.2
Vdc
VOH
4.9
−
−
Vdc
R1
32.9
47
61.1
kW
R1/R2
0.8
1.0
1.2
ICBO
−
−
100 nAdc
ICEO
−
−
500 nAdc
IEBO
−
−
0.1 mAdc
V(BR)CBO
50
V(BR)CEO
50
hFE
80
VCE(SAT)
−
VOL
−
VOH
4.9
R1
33
R1/R2
0.8
−
−
Vdc
−
−
Vdc
140
−
−
0.25
Vdc
−
0.2
Vdc
−
−
Vdc
47
61
kW
1.0
1.2
150
100
50
0
−50
RqJA = 833°C/W
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
http://onsemi.com
2
 ▷