NSS60101DMT_16 Datasheet, PDF (4/6 Pages) ON Semiconductor – NPN Transistors

NSS60101DMT
TYPICAL CHARACTERISTICS
1.2
1.0
0.8 ^{−55°C}
0.6 ^25°C
100°C
0.4 _150°C
0.2
V_CE = 2 V
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter “ON” Voltage
1.0
0.9
T_A = 25°C
0.8
0.7
0.6
0.5
I_C = 2.0 A
0.4
0.3
I_C = 1.0 A
0.2
0.1 _{IC = 0.1 A}
0
I_C = 0.5 A
0.0001 0.001
0.01
0.1
1
I_B, BASE CURRENT (A)
Figure 8. Collector Saturation Region
240
200
T_A = 25°C
f = 1 MHz
160
120
80
40
0
1
2
3
4
5
6
7
V_EB, BASE−EMITTER VOLTAGE (A)
Figure 9. Input Capacitance
40
35
T_A = 25°C
f = 1 MHz
30
25
20
15
10
5
0
0
5
10
15
20
25
30
V_CB, COLLECTOR−BASE REVERSE VOLTAGE (V)
Figure 10. Output Capacitance
1000
2.5
T_J = 25°C
V_CE = 2 V
f_test = 100 MHz
2.0
1.5
100
1.0
10
1
10
100
1000
I_C, COLLECTOR CURRENT (mA)
Figure 11. f_T, Current Gain Bandwidth Product
0.5
0
0
25
50
75
100
125 150
TEMPERATURE (°C)
Figure 12. Power Derating
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