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| NSS60101DMT_16 Datasheet, PDF (2/6 Pages) ON Semiconductor – NPN Transistors | |||
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NSS60101DMT
Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (IC = 10 mA, IB = 0)
CollectorâBase Breakdown Voltage (Ic = 0.1 mA, IE = 0)
EmitterâBase Breakdown Voltage (IE = 0.1 mA, IC = 0)
Collector Cutoff Current (VCB = 60 V, IE = 0)
Emitter Cutoff Current (VBE = 5.0 V)
ON CHARACTERISTICS
V(BR)CEO
60
V(BR)CBO
80
V(BR)EBO
6
ICBO
IEBO
V
V
V
100
nA
100
nA
DC Current Gain (Note 4)
(IC = 100 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1 A, VCE = 2.0 V)
(IC = 2 A, VCE = 2.0 V
CollectorâEmitter Saturation Voltage (Note 4)
(IC = 500 mA, IB = 50 mA)
(IC = 1 A, IB = 50 mA)
(IC = 1 A, IB = 100 mA)
Base*Emitter Saturation Voltage (Note 4)
(IC = 500 mA, IB = 50 mA)
(IC = 1 A, IB = 50 mA)
(IC = 1 A, IB = 100 mA)
hFE
150
250
120
240
90
180
35
55
VCE(sat)
V
0.063
0.100
0.130
0.200
0.115
0.180
VBE(sat)
V
1.0
1.0
1.1
BaseâEmitter Turnâon Voltage (Note 4)
(IC = 500 mA, VCE = 2 V)
VBE(on)
0.9
V
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
10
pF
Cutoff Frequency
(IC = 50 mA, VCE = 2.0 V, f = 100 MHz)
fT
180
MHz
SWITCHING TIMES
Delay Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = â25 mA)
td
13
ns
Rise Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = â25 mA)
tr
18
ns
Storage Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = â25 mA)
ts
700
ns
Fall Time (VCC = 10 V, IC = 0.5 A, IB1 = 25 mA, IB2 = â25 mA)
tf
80
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Condition: Pulse Width = 300 msec, Duty Cycle ⤠2%
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