NSS40401LT1G Datasheet, PDF (4/5 Pages) ON Semiconductor – NPN Transistor

NSS40401LT1G
TYPICAL CHARACTERISTICS
2.0
T_A = 25 °C
1.6
1.2
0.8
0.4
0
0.01
10 mA
2A
100 mA ^{500 mA}
I_C = 4 mA
0.1
1
10
100
1000
I_B, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
80
70
60
50
40
30
20
10
0
5
10
15
20
25
30 35
V_CB, COLLECTOR BASE VOLTAGE (V)
Figure 8. Output Capacitance
400
375
350
325
300
275
250
225
200
175
0
1
2
3
4
5
V_EB, EMITTER BASE VOLTAGE (V)
Figure 9. Input Capacitance
10
10 ms
1 ms
1
100 ms
0.1
1s
0.01
6
0.01
0.1
1
10
100
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 10. Safe Operating Area
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