NSS40401LT1G Datasheet, PDF (3/5 Pages) ON Semiconductor – NPN Transistor

NSS40401LT1G
TYPICAL CHARACTERISTICS
800
150°C
700
V_CE = 2.0 V
600
500
25°C
400
300
−55°C
200
100
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain vs. Collector
Current
0.5
I_C/I_B = 10
0.4
150°C
800
150°C
700
V_CE = 5.0 V
600
500
25°C
400
300
−55°C
200
100
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain vs. Collector
Current
0.5
I_C/I_B = 50
0.4
0.3
0.2
25°C
0.1
0
0.001
0.01
0.1
−55°C
1
10
I_C, COLLECTOR CURRENT (mA)
Figure 3. Collector−Emitter Saturation Voltage
vs. Collector Current
1.4
I_C/I_B = 10
1.2
1.0
−55°C
0.8
0.6
25°C
0.4
0.2 150°C
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (mA)
Figure 5. Base−Emitter Saturation Voltage vs.
Collector Current
0.3
150°C
0.2
0.1
0
0.001
0.01
25°C
−55°C
0.1
1
10
I_C, COLLECTOR CURRENT (mA)
Figure 4. Collector−Emitter Saturation Voltage
vs. Collector Current
1.2
V_CE = 2.0 V
1.0
0.8 ^{−55°C}
0.6
25°C
0.4
0.2
150°C
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Turn−On Voltage vs.
Collector Current
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