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NSS40401LT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – NPN Transistor
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NSS40401LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc)
V(BR)CEO
40
V(BR)CBO
40
V(BR)EBO
6.0
ICBO
−
IEBO
−
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(IC = 0.1 A, IB = 0.010 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 1.0 A, IB = 0.010 A)
(IC = 2.0 A, IB = 0.200 A)
Base −Emitter Saturation Voltage (Note 3)
(IC = 1.0 A, IB = 10 mA)
Base −Emitter Turn−on Voltage (Note 3)
(IC = 1.0 A, VCE = 2.0 V)
Cutoff Frequency
(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
hFE
200
200
180
180
VCE(sat)
−
−
−
−
VBE(sat)
−
VBE(on)
−
fT
150
Cibo
−
Cobo
−
Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
td
−
tr
−
ts
−
tf
−
Typ
Max
Unit
Vdc
−
−
Vdc
−
−
Vdc
−
−
mAdc
−
0.1
mAdc
−
0.1
−
370
−
−
0.006
0.044
0.085
0.082
0.760
0.760
−
−
−
−
−
−
−
−
−
−
−
0.011
0.060
0.115
0.115
0.900
0.900
−
450
45
100
100
750
110
V
V
V
MHz
pF
pF
ns
ns
ns
ns
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