NSS40200L_16 Datasheet, PDF (4/6 Pages) ON Semiconductor – PNP Transistor

NSS40200L, NSV40200L
TYPICAL CHARACTERISTICS
0.25
IC/IB = 10
0.2
0.15
0.1
V_CE(sat) = 150°C
25°C
−55°C
0.05
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
800
750
150°C (5.0 V)
700
650 150°C (2.0 V)
600
550
500 25°C (5.0 V)
450
400 _{25°C (2.0 V)}
350
300 _{−55°C (5.0 V)}
250
200 _{−55°C (2.0 V)}
150
100
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
1.0
V_CE = −2.0 V
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4
150°C
0.3
0.2
0.1
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
0.35
IC/IB = 100
0.3
0.25
V_CE(sat) = 150°C
−55°C
25°C
0.2
0.15
0.1
0.05
0
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
IC/IB = 10
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.001
0.01
0.1
1.0
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
10 mA
V_CE (V) I_C = 500 mA
0.8
100 mA
300 mA
0.6
0.4
0.2
0
0.01
0.1
1.0
10
100
I_B, BASE CURRENT (mA)
Figure 6. Saturation Region
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