NSS40200L_16 Datasheet, PDF (2/6 Pages) ON Semiconductor – PNP Transistor

NSS40200L, NSV40200L
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current − Peak
Electrostatic Discharge
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_BM
ESD
−40
Vdc
−40
Vdc
−7.0
Vdc
−2.0
A
−4.0
A
−300
mA
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
460
3.7
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 1)
270
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
540
4.3
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 2)
230
°C/W
Total Device Dissipation
(Single Pulse < 10 sec)
P_Dsingle
mW
(Note 3)
710
Junction and Storage Temperature Range
T_J, T_stg
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm², 1 oz. copper traces.
2. FR− 4 @ 500 mm², 1 oz. copper traces.
3. Thermal response.
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