NSS1C201MZ4_10 Datasheet, PDF (4/6 Pages) ON Semiconductor – 100 V, 2.0 A, Low VCE(sat) NPN Transistor

NSS1C201MZ4
1.4
I_C /I_B = 50
1.2
1
0.8
0.6
0.4
0.2
−55°C
25°C
150°C
1.2
V_CE = 2 V
1.0
0.8
0.6
0.4
0.2
−55°C
25°C
150°C
0
0.0
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 7. Base−Emitter Saturation Voltage
I_C, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Voltage
1.00
0.5 A
0.10
1A
I_C = 0.1 A
3A
2A
0.01
0.0001
0.001
0.01
T_J = 25°C
0.1
1
I_B, BASE CURRENT (A)
Figure 9. Collector Saturation Region
400
350
300
250
200
150
100
50
0
0
T_J = 25°C
fT_EST = 1 MHz
1
2
3
4
5
6
7
8
V_EB, BASE−EMITTER VOLTAGE (V)
Figure 10. Input Capacitance
50
45
T_J = 25°C
40
fT_EST = 1 MHz
35
30
25
20
15
10
5
0
0 10 20 30 40 50 60 70 80 90 100
V_CB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
120
T_J = 25°C
100 fT_EST = 1 MHz
V_CE = 5 V
80
60
40
20
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 12. Current Gain Bandwidth Product
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