 English |
|
|
|
|
|
|
|
| NSS1C201MZ4_10 Datasheet, PDF (2/6 Pages) ON Semiconductor – 100 V, 2.0 A, Low VCE(sat) NPN Transistor | |||
| |||
| ◁ |
NSS1C201MZ4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector âEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector âBase Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
Emitter âBase Breakdown Voltage (IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current (VCB = 140 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 6.0 Vdc)
ON CHARACTERISTICS
V(BR)CEO
100
V(BR)CBO
140
V(BR)EBO
7.0
ICBO
IEBO
DC Current Gain (Note 4)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector âEmitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 0.010 A)
(IC = 0.5 A, IB = 0.050 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
Base âEmitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 0.100 A)
Base âEmitter Turnâon Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V)
Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ⤠2%.
hFE
150
120
80
40
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
Typ
Max
Unit
Vdc
Vdc
Vdc
100
nA
50
nA
360
V
0.030
0.060
0.100
0.180
V
1.10
0.850
V
100
MHz
305
pF
22
pF
http://onsemi.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese