NSS1C201MZ4_10 Datasheet, PDF (3/6 Pages) ON Semiconductor – 100 V, 2.0 A, Low VCE(sat) NPN Transistor

NSS1C201MZ4
0.60
0.50
0.40
0.30
0.20
0.10
0
0
400
360
320
Note 2
280
240
200
Note 1
160
120
80
40
20 40 60 80 100 120 140 160
T_J, TEMPERATURE (°C)
Figure 1. Power Derating
0
0.001
150°C
V_CE = 2 V
25°C
−55°C
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
400
360
320
280
240
200
160
120
80
40
0
0.001
150°C
V_CE = 4 V
1
I_C /I_B = 10
25°C
−55°C
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
0.1
150°C
25°C
−55°C
0.01
10
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
1
I_C /I_B = 20
0.1
25°C
150°C
−55°C
0.01
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 5. Collector−Emitter Saturation Voltage
1.4
I_C /I_B = 10
1.2
1
150°C
0.8
0.6
25°C
0.4
−55°C
0.2
0
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
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