NSS1C201LT1G Datasheet, PDF (4/5 Pages) ON Semiconductor – 100 V, 3.0 A, Low VCE(sat) NPN Transistor

NSS1C201LT1G
1.2
V_CE = 2 V
1.0
0.8
0.6
0.4
TYPICAL CHARACTERISTICS
−55°C
25°C
1
3A
2A
1A
0.5 A
0.1
150°C
I_C = 0.1 A
0.2
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 8. Base Emitter Voltage
0.01
10
0.0001 0.001
0.01
0.1
1
I_B, BASE CURRENT (A)
Figure 9. Collector Saturation Region
400
350
300
250
200
150
100
50
0
0
T_J = 25°C
f_TEST = 1 MHz
1
2
3
4
5
6
7
8
V_EB, EMITTER BASE VOLTAGE (V)
Figure 10. Input Capacitance
50
45
T_J = 25°C
40
f_TEST = 1 MHz
35
30
25
20
15
10
5
0
0 10 20 30 40 50 60 70 80 90 100
V_CB, COLLECTOR BASE VOLTAGE (V)
Figure 11. Output Capacitance
140
T_J = 25°C
120 f_TEST = 1 MHz
V_CE = 2 V
100
80
60
40
20
0
0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 12. Current−Gain Bandwidth Product
10
10 mS
1 mS
100 mS
1
Thermal Limit
0.1
0.01
0.1
1
10
100
V_CE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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