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NSS1C201LT1G Datasheet, PDF (3/5 Pages) ON Semiconductor – 100 V, 3.0 A, Low VCE(sat) NPN Transistor | |||
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400
350
300
250
200
150
100
50
0
0.001
NSS1C201LT1G
TYPICAL CHARACTERISTICS
150°C
400
VCE = 2 V
350
150°C
VCE = 4 V
25°C
300
250
25°C
â55°C
200
150
â55°C
100
50
0
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
1
IC/IB = 10
0.1
150°C
25°C
â55°C
1
IC/IB = 20
0.1
150°C
25°C
â55°C
0.01
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 4. CollectorâEmitter Saturation Voltage
0.01
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. CollectorâEmitter Saturation Voltage
1.2
IC/IB = 10
1.0
0.8
0.6
0.4
â55°C
25°C
150°C
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 6. BaseâEmitter Saturation Voltage
1.2
IC/IB = 50
1.0
0.8
0.6
â55°C
25°C
150°C
0.4
0.2
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 7. BaseâEmitter Saturation Voltage
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