NSS1C201LT1G Datasheet, PDF (2/5 Pages) ON Semiconductor – 100 V, 3.0 A, Low VCE(sat) NPN Transistor

NSS1C201LT1G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I_C = −10 mAdc, I_B = 0)
Collector −Base Breakdown Voltage
(I_C = −0.1 mAdc, I_E = 0)
Emitter −Base Breakdown Voltage
(I_E = −0.1 mAdc, I_C = 0)
Collector Cutoff Current
(V_CB = −140 Vdc, I_E = 0)
Emitter Cutoff Current
(V_EB = −6.0 Vdc)
V_(BR)CEO
100
V_(BR)CBO
140
V_(BR)EBO
7.0
I_CBO
I_EBO
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I_C = −10 mA, V_CE = −2.0 V)
(I_C = −500 mA, V_CE = −2.0 V)
(I_C = −1.0 A, V_CE = −2.0 V)
(I_C = −2.0 A, V_CE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(I_C = −0.1 A, I_B = −0.01 A)
(I_C = −0.5 A, I_B = −0.05 A)
(I_C = −1.0 A, I_B = −0.100 A)
(I_C = −2.0 A, I_B = −0.200 A)
Base −Emitter Saturation Voltage (Note 3)
(I_C = −1.0 A, I_B = −0.100 A)
Base −Emitter Turn−on Voltage (Note 3)
(I_C = −1.0 A, V_CE = −2.0 V)
Cutoff Frequency
(I_C = −100 mA, V_CE = −5.0 V, f = 100 MHz)
Input Capacitance (V_EB = 2.0 V, f = 1.0 MHz)
Output Capacitance (V_CB = 10 V, f = 1.0 MHz)
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
h_FE
150
120
80
40
V_CE(sat)
V_BE(sat)
V_BE(on)
f_T
Cibo
Cobo
Typ
Max
Unit
Vdc
Vdc
Vdc
nAdc
100
nAdc
50
240
360
V
0.030
0.060
0.090
0.150
V
0.950
V
0.850
MHz
110
230
pF
14
pF
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
TYPICAL CHARACTERISTICS
Note 2
Note 1
20 40 60 80 100 120 140
T_J, TEMPERATURE (°C)
Figure 1. Power Derating
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