NRVTSS5100E Datasheet, PDF (4/6 Pages) ON Semiconductor – Low Leakage Trench-based Schottky Rectifier

NRVTSS5100E, NRVTSAF5100E
TYPICAL CHARACTERISTICS
9
8
DC
R_qJL = 24.4°C/W
7
6 Square Wave
5
4
3
2
1
0
0 20 40 60 80 100 120 140 160
T_L, LEAD TEMPERATURE (°C)
Figure 7. Current Derating per Diode for
NRVTSAF5100E
18
I_PK/I_AV
16 _{= 20}
14
I_PK/I_AV = 10
12
10
8
I_PK/I_AV = 5
6
Square Wave
4
2
DC
0
0
1
2
3
4
5
6
7
I_F(AV), AVERAGE FORWARD CURRENT (A)
Figure 8. Forward Power Dissipation
1000
100 50% Duty Cycle
20%
10%
10
5%
2%
1
1%
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 9. Transient Thermal Response, Junction−to−Ambient, for
NRVTSS5100E
100
50% Duty Cycle
20%
10
10%
5%
2%
1
1%
0.1
0.0000001 0.000001
0.00001 0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 10. Transient Thermal Response, Junction−to−Ambient, for
NRVTSAF5100E
100
1000
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