NRVTSS5100E Datasheet, PDF (3/6 Pages) ON Semiconductor – Low Leakage Trench-based Schottky Rectifier

NRVTSS5100E, NRVTSAF5100E
TYPICAL CHARACTERISTICS
100
100
10
T_A = 150°C
T_A = 125°C
T_A = 85°C
1
T_A = 175°C
T_A = 25°C
T_A = 150°C
10
T_A = 125°C
T_A = 85°C
T_A = 175°C
1
T_A = 25°C
T_A = −55°C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
T_A = −55°C
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
T_A = 175°C
T_A = 150°C
T_A = 125°C
T_A = 85°C
1.E−01
1.E−02
1.E−03
1.E−04
T_A = 175°C
T_A = 150°C
T_A = 125°C
T_A = 85°C
1.E−05
1.E−06
T_A = 25°C
1.E−05
1.E−06
T_A = 25°C
1.E−07
1.E−07
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
100
T_J = 25°C
10
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
9
8 DC
7
6 _{Square Wave}
5
4
3
2
1 _{RqJL = 13.1°C/W}
0
0 20 40 60 80 100 120 140 160
T_L, LEAD TEMPERATURE (°C)
Figure 6. Current Derating per Diode for
NRVTSS5100E
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