NRVTSS5100E Datasheet, PDF (2/6 Pages) ON Semiconductor – Low Leakage Trench-based Schottky Rectifier

NRVTSS5100E, NRVTSAF5100E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V_RRM
V
V_RWM
V_R
100
Average Rectified Forward Current
(T_L = 100°C)
I_F(AV)
5.0
A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, T_L = 83°C)
I_FRM
10
A
Non−Repetitive Peak Surge Current
I_FSM
50
A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
ESD Rating (Human Body Model)
T_stg
−65 to +175
°C
T_J
−55 to +175
°C
1B
ESD Rating (Machine Model)
M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Steady State (Note 1)
(NRVTSAF5100E)
Junction−to−Lead
Junction−to−Ambient
(NRVTSS5100E)
Junction−to−Lead
Junction−to−Ambient
1. Assumes 600 mm² 1 oz. copper bond pad, on a FR4 board
Symbol
R_θJL
R_θJA
R_θJL
R_θJA
Max
25
90
13.1
71.1
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 2)
(i_F = 3.0 A, T_J = 25°C)
(i_F = 5.0 A, T_J = 25°C)
Symbol
Typ
v_F
0.56
0.65
Max
Unit
V
−
0.69
(i_F = 3.0 A, T_J = 125°C)
(i_F = 5.0 A, T_J = 125°C)
0.50
−
0.56
0.62
Reverse Current (Note 2)
(Rated dc Voltage, T_J = 25°C)
(Rated dc Voltage, T_J = 125°C)
i_R
2.6
9
mA
2.2
5
mA
Diode Capacitance
(Rated dc Voltage, T_J = 25°C, f = 1 MHz)
C_d
pF
54.4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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